Title:
キャパシタ、キャパシタ用電極、集積回路キャパシタ、及びそれらの製造方法
Document Type and Number:
Japanese Patent JP4399521
Kind Code:
B2
Abstract:
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.
Inventors:
Young shining
Gary Dan
Sandu Gates
Rhodes Howard
Visokei mark
Gary Dan
Sandu Gates
Rhodes Howard
Visokei mark
Application Number:
JP2002566534A
Publication Date:
January 20, 2010
Filing Date:
February 11, 2002
Export Citation:
Assignee:
Mosaid Technologies Incorporated
International Classes:
C23C16/18; H01L21/8242; H01L21/02; H01L21/28; H01L21/285; H01L27/108
Domestic Patent References:
| JP10173142A | ||||
| JP2000183287A | ||||
| JP11317377A | ||||
| JP2000212742A | ||||
| JP8264735A |
Attorney, Agent or Firm:
Nomura Yasuhisa
Yoshiyuki Osuga
Yoshiyuki Osuga