To provide a capacity type pressure sensor which can tap an impossible temperature range for a silicon pressure sensor.
A first wafer supports an evaluation circuit and a capacitive electrode which are required to measure mainly an applied pressure. A second wafer has a notch part formed by a surface micro-mechanical process. A counter electrode to the capacitive electrode of the first wafer is arranged inside the notch part. The second wafer consists of a cover part to the first wafer simultaneously. A manufacturing method of the capacity type pressure sensor comprises: preparing the capacity type pressure sensor and a first SOI wafer; forming the capacitive electrode on the first wafer; forming the evaluation circuit on the first wafer; preparing a second SOI wafer; forming the notch part on the second wafer; forming the counter electrode to the capacitive electrode on the first wafer; and connecting the two wafers hermetically so as to locate the notch part between two wafers.
STOLL OLIVER
Einzel Felix-Reinhard
Reinhard Einsel
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