Title:
CAPACITY VARIABLE SUBSTRATE AND SUBSTRATE PARASITIC CAPACITY ADJUSTMENT METHOD
Document Type and Number:
Japanese Patent JP2005175365
Kind Code:
A
Abstract:
To obtain a capacity variable substrate that can decrease parasitic capacity of a substrate, as well as adjusting its parasitic capacity, and to obtain a substrate parasitic capacity adjustment method for adjusting substrate's parasitic capacity.
On this capacity variable substrate a dielectric layer 2 is formed between a wiring conductor 3 and a ground layer 4, and its dielectric constant is made variable by producing a depletion layer 10 in this dielectric layer 2, thus forming a semiconductor 12 that can adjust the parasitic capacity, which is parasitic on the wiring conductor 3.
Inventors:
YAJIMA ARITSUGU
Application Number:
JP2003416430A
Publication Date:
June 30, 2005
Filing Date:
December 15, 2003
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01G7/06; H01L21/822; H01L27/04; H01L29/93; H05K1/02; (IPC1-7): H05K1/02; H01G7/06; H01L21/822; H01L27/04; H01L29/93
Attorney, Agent or Firm:
Masahiko Ueyanagi
Fujitsuna Hideyoshi
Osamu Suzawa
Fujitsuna Hideyoshi
Osamu Suzawa