To provide a photoelectric element which has a high quantum efficiency and in which manufacturing steps are simple and have a low cost, and to provide a method for manufacturing the same.
The carbon photoelectric element comprises a back electrode 15, an n-type conductor layer 14, a nanocarbon molecule layer 13 made of a fullerens or a carbon nanotube, a p-type semiconductor layer 12, and a surface electrode 11. The p-type semiconductor layer 12 is amorphous. Here, the amorphous layer of the p-type semiconductor layer 12 is desired to be a structure- changed layer by emitting a laser beam to the uppermost surface of the carbon nanomolecule layer. The fullurenes are desired to be C60. The n-type semiconductor layer 14 can be a silicon substrate.
YAMAGUCHI MASASHI
KANAN RAKUSHIMI NARAYANAN
