Title:
CASCODE TRANSISTOR AND METHOD OF CONTROLLING CASCODE TRANSISTOR
Document Type and Number:
Japanese Patent JP2015061265
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a cascode transistor that more reliably prevents the application of a voltage exceeding a withstanding voltage of a silicon MOS-FET, in the light of the problems wherein, when a cascode transistor comprising a silicon MOS-FET and a GaN-HEMT connected in series is switched, a higher voltage is applied to the silicon MOS-FET, which has a lower withstanding voltage, to deteriorate the silicon MOS-FET and shorten the life thereof.SOLUTION: The cascode transistor includes: a first switching element; a second switching element having a higher withstanding voltage than the first switching element and cascade-connected to a drain of the first switching element; and a switch and a capacitor connected in series and disposed between a connection node of the first switching element and the second switching element and a source of the first switching element.
Inventors:
HIROSE TATSUYA
TSUNENOBU KAZUKIYO
TSUNENOBU KAZUKIYO
Application Number:
JP2013195286A
Publication Date:
March 30, 2015
Filing Date:
September 20, 2013
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H03F1/22; H01L21/336; H01L21/338; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/095; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2006324839A | 2006-11-30 | |||
| JP2013153027A | 2013-08-08 | |||
| JP2001111369A | 2001-04-20 | |||
| JP2010522432A | 2010-07-01 |
Attorney, Agent or Firm:
Junichi Yokoyama