To provide a catalyst support type chemical machining method, and a catalyst support type chemical machining apparatus considerably improving the machining efficiency with excellent accuracy for a hard-to-work workpiece such as SiC and GaN in the catalyst support type chemical machining method using the catalyst effect enabling the chemical reaction while without changing the reference surface, and manufacturing a substrate for a power device such as single crystal SiC and GaN only by the machining method.
A workpiece is brought into contact with an iron surface plate as a catalyst at the predetermined pressure while feeding blended polishing liquid with at least one of transition metal particles and oxide particles and hydrogen peroxide solution as a base, and the workpiece is polished by relatively moving the iron surface plate to the workpiece. Further, the workpiece is brought into contact with a polishing pad with the predetermined pressure while feeding the blended polishing liquid with the transition metal particles, oxide particles and hydrogen peroxide solution as the catalyst being the base on the polishing pad with CeO
COPYRIGHT: (C)2010,JPO&INPIT
| JP2008136983A | 2008-06-19 | |||
| JP2006114632A | 2006-04-27 | |||
| JP2007283410A | 2007-11-01 | |||
| JPH10265766A | 1998-10-06 | |||
| JP2002346915A | 2002-12-04 | |||
| JP2004358643A | 2004-12-24 | |||
| JP2001502610A | 2001-02-27 | |||
| JP2008136983A | 2008-06-19 | |||
| JP2006114632A | 2006-04-27 | |||
| JP2007283410A | 2007-11-01 |
Norio Morioka
Hisayoshi Sekiguchi