Title:
CCD PICTURE SENSOR WITH DECREASED CROSSTALK BETWEEN PHOTODIODES
Document Type and Number:
Japanese Patent JPH07226495
Kind Code:
A
Abstract:
PURPOSE: To obtain a high charge storage density by a method wherein all sets of optical information incident between adjacent photodetecting apertures of a 1st linear array are offset approximately by the width of the photodetecting aperture from the 1st linear array along a scanning line so as to have all the sets of the optical information sensed by the photodetecting apertures of a 2nd linear array. CONSTITUTION: The 1st array 40 and 2nd array 41 of respective imaging photodetectors 14 corresponds to the array of even number pixels and the array of odd numbers respectively. Each photodetector 14 senses incident optical information through a photodetecting aperture 50 and converts the optical information into charge carriers. The charge carriers are corrected in a correction region positioned beneath the photodetecting aperture 50. The adjacent photodetecting apertures 50 of both the 1st and 2nd arrays are separated from each other by light shielding layers 51 and the two adjacent photodetecting apertures are separated from each other by regions which are not the parts of the photodetectors. As a result, a high aperture MTF can be obtained and the diffusion crosstalk between the diodes in the array can be reduced.
Inventors:
ROBAATO EICHI FUIRUBURITSUKU
HERUBERUTO JIEI ERUHARUTO
HERUBERUTO JIEI ERUHARUTO
Application Number:
JP31368794A
Publication Date:
August 22, 1995
Filing Date:
December 16, 1994
Export Citation:
Assignee:
EASTMAN KODAK CO
International Classes:
H01L27/146; H04N1/028; H04N1/19; H04N5/361; H04N5/369; (IPC1-7): H01L27/146; H04N1/028; H04N1/19; H04N5/335
Attorney, Agent or Firm:
Tadahiko Ito (1 outside)