Title:
CDTE SINGLE CRYSTAL FOR PHOTOREFRACTIVE ELEMENT AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH0570297
Kind Code:
A
Abstract:
PURPOSE:To provide the CdTe single crystal for a photorefractive element having excellent responsiveness, high sensitivity and high efficiency and the process for production thereof. CONSTITUTION:CdTe single crystal for the photorefractive element is doped with impurity atoms and has a deep trap level in the energy band gap thereof, and the impurity atoms are constituted of Cl and this Cl concn. is >=1X1018 atoms/cm<3> and <=1X10<20>atoms/cm<3>. In addition, the total atom concn. of the other impurity atoms is <=8X10<14>atoms/cm<3>. The crystallinity of the CdTe single crystal is improved by applying the Cl atoms in place of conventional In, etc. In addition, the formation of carriers arising from the thermal excitation in the crystal is suppressed and the specific resistance value thereof is increased and, therefore, the sufficient PF effect by photoirradiation is obtd.
Inventors:
OGAWA TAKASHI
Application Number:
JP22892791A
Publication Date:
March 23, 1993
Filing Date:
September 09, 1991
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B11/00; C30B29/48; G02F1/35; G03H1/00; (IPC1-7): C30B11/00; C30B29/48; G02F1/35; G03H1/00
Attorney, Agent or Firm:
Ueda Shozo
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