Title:
CERAMIC FILM FORMATION PROCESS AND CERAMIC FILM
Document Type and Number:
Japanese Patent JP3668126
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a ceramic film formation process for forming a ceramic film such as meso-porous silica film, on a substrate such as silicon wafer.
SOLUTION: The film formation process comprises: a stage for preparing a film forming liquid which consists of a ceramic precursor, a catalyst, a surfactant and a solvent; a stage for placing the film forming liquid on a substrate; and a stage for removing the solvent from the film forming liquid on the substrate to form a ceramic film on the substrate, wherein the ceramic film thus formed has a <2.3 dielectric constant, a <1 ppm halide content and a <500 ppm metal content and therefore is useful in the present and future application to microelectronics.
Inventors:
James Edward McDougall
Kevin Earl Heir
Scott Jeffrey Weigel
Timothy W. Wademan
Alexandros Tea. Demos
Nikolaos Vekialis
Yun Feng
Robert perkash mandal
Michael P. Noord
Kevin Earl Heir
Scott Jeffrey Weigel
Timothy W. Wademan
Alexandros Tea. Demos
Nikolaos Vekialis
Yun Feng
Robert perkash mandal
Michael P. Noord
Application Number:
JP2000372712A
Publication Date:
July 06, 2005
Filing Date:
December 07, 2000
Export Citation:
Assignee:
AIR PRODUCTS AND CHEMICALS INCORPORATED
International Classes:
C04B35/622; B05D5/12; C08F292/00; C08L53/00; C09D1/00; C09D153/00; C09D183/02; C09D185/00; H01B3/12; H01L21/312; H01L21/316; H05K3/46; (IPC1-7): C04B35/622; C09D1/00; H05K3/46
Domestic Patent References:
| JP8059353A | ||||
| JP6227855A | ||||
| JP8333157A | ||||
| JP11116333A |
Attorney, Agent or Firm:
Takashi Ishida
Jun Tsuruta
Tetsuji Koga
Masaya Nishiyama
Higuchi Souji
Jun Tsuruta
Tetsuji Koga
Masaya Nishiyama
Higuchi Souji
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