To provide a TiN-based ceramic stacked film having excellent crystallinity.

The ceramic stacked film is formed through a vapor deposition process comprising successively stacking a ground film and a titanium nitride film on a base material. The ground film is a film containing zinc oxide as a main component, the film thickness of the ground film is 1-150 nm, and the film thickness of the titanium nitride film is 1-50,000 nm. The titanium nitride film is characterized in that a diffraction line belonging to the (200) plane of titanium nitride is detected near 42°, in an X-ray diffraction measurement using CuKα-ray.