Title:
CERIUM OXIDE ABRASIVE MATERIAL AND POLISHING OF SUBSTRATE
Document Type and Number:
Japanese Patent JPH10298538
Kind Code:
A
Abstract:
To provide a cerium oxide abrasive material capable of polishing the surface of an SiO2 insulation film, etc., at a high speed to a flawless state.
An Si wafer having an SiO2 insulation film produced by TEOS- CVD method is polished with a slurry polishing agent produced by using cerium oxide particles containing ≥90% particles having particle diameter of 20-1,500 nm measured by electron microscope observation based on the total number of the abrasive particles and containing ≥90 vol.% of particles having particle diameter of 100-1,500 nm measured by electron microscope observation based on the total volume of the particles and dispersing the above particles in a medium.
Inventors:
ASHIZAWA TORANOSUKE
YOSHIDA MASATO
TERASAKI HIROKI
KURATA YASUSHI
MATSUZAWA JUN
TANNO KIYOHITO
OTSUKI HIROTO
YOSHIDA MASATO
TERASAKI HIROKI
KURATA YASUSHI
MATSUZAWA JUN
TANNO KIYOHITO
OTSUKI HIROTO
Application Number:
JP11239697A
Publication Date:
November 10, 1998
Filing Date:
April 30, 1997
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
B24B37/00; C01F17/00; C09C1/68; C09K3/14; H01L21/304; (IPC1-7): C09K3/14; B24B37/00; C09C1/68; H01L21/304
Attorney, Agent or Firm:
Kunihiko Wakabayashi