To provide a cerium oxide abrasive which can polish a surface to be polished, such as of an SiO2 insulation film, at a high speed without damaging the surface.
An Si wafer having an SiO2 insulation film formed thereon by the TEOS-CVD method is polished with a cerium oxide abrasive containing a slurry. The slurry is prepared by dispersing, in a medium, cerium oxide particles of which the primary particle size is 10-600 nm and its median is 30-250 nm; the median of the particle size is 150-600 nm and the max. particle size is 3,000 nm or lower; the average particle size of a slurry prepared by dispersing cerium oxide particles having a specific surface area of 7-45 m2/g in a medium is 200 nm or higher but lower than 400 nm; and the half width of particle size distribution is 300 nm or lower.
ASHIZAWA TORANOSUKE
TERASAKI HIROKI
KURATA YASUSHI
MATSUZAWA JUN
TANNO KIYOHITO
OTSUKI HIROTO
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