Title:
CHARACTERISTIC TESTING METHOD OF SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH04116438
Kind Code:
A
Abstract:
PURPOSE:To save labor for preparatory work and to test surely with high accuracy by providing many sensors in a closed chamber, and changing the operating pressure to the sensors in a batch by the change of the internal pressure of the chamber. CONSTITUTION:A closed chamber 2 is placed inside a constant temperature bath 5, and is connected to a pressure control device 3 and a data processor 4. Accordingly, the preparatory work for tests is completed if only many semiconductor pressure sensors 1 to be tested are put in the chamber 2. When a predetermined reference pressure is generated by the device 3, the internal pressure of the chamber 2 becomes equal to the reference pressure and added equally to each sensor 1. When the internal pressure of the chamber 2 is changed, it positively acts on each sensor. Therefore, the labor for preparatory work is saved, and highly accurate and positive tests are assured.
Inventors:
SEKIYAMA HISASHI
ICHIHASHI MOTOUMI
ICHIHASHI MOTOUMI
Application Number:
JP23771090A
Publication Date:
April 16, 1992
Filing Date:
September 06, 1990
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01L9/04; G01L9/00; G01L27/00; (IPC1-7): G01L9/04; G01L27/00
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)