CHARACTERIZATION OF WAFER EDGE BY SEAMLESS RADIUS MEASUREMENT

Title:

CHARACTERIZATION OF WAFER EDGE BY SEAMLESS RADIUS MEASUREMENT

Document Type and Number:

Japanese Patent JP2009076922

Kind Code:

A

Abstract:

To provide a system and method for measuring an eddy current that enables a substrate to obtain a desired planarized thickness profile.

A substrate 10 is scanned in a radial direction. When a tip of a wafer passes a horizontal position sensor 106, a measuring point is detected. An eddy current sensor 103 measures a film thickness of the substrate thereby. By equalizing measured thickness obtained from various radiuses along the substrate, an average thickness is determined for a zone in each radius direction of the substrate. Next, the average is used for controlling a polish parameter. For example, using an average thickness for the edge of the substrate, a pressure applied by a carrier head is controlled so as to reduce non-uniformity within the wafer. Thus, the substrate having a desired planarized thickness profile can be obtained.

Inventors:

IGNACIO PALAU-RIVERA
SWEDEK BOGUSLAW A
KARUPPIAH LAKSHMANAN

Application Number:

JP2008244688A

Publication Date:

April 09, 2009

Filing Date:

September 24, 2008

Export Citation:

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Assignee:

APPLIED MATERIALS INC

International Classes:

H01L21/304; B24B37/013; B24B49/10

Domestic Patent References:

JP2005011977A	2005-01-13
JP2001274126A	2001-10-05
JP2006511801A	2006-04-06
JP2002148010A	2002-05-22

Attorney, Agent or Firm:

Yoshiki Hasegawa
Yuichi Yamada
Ikeda adult

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