Title:
CHARGE TRANSFER DEVICE AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3248470
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize smooth charge transfer.
SOLUTION: An opposite conductivity type N-type semiconductor region 202 is formed within a P-type semiconductor substrate, and it is oxidized thermally so as to form an insulation film on the surface of the N-type semiconductor layer. Next, while a photo-resist formed in the specified region by photo-etching is used as a mask, the N-type semiconductor region 202 and an opposite conductivity type impurity is introduced by ion implantation so as to form an N-type semiconductor region 205. The shape of mask for ion implantation of the impurity is a chevron in the horizontal direction in the boundary between potential block region and charge accumulation region, the implantation range of the potential block region is made smaller toward the charge transfer direction, and the potential of the potential block region is made lower gradually by narrow channel effect. Thus, the potential of the charge accumulation region is made higher in the charge transfer direction in the joint part between the potential block region and charge accumulation region by utilizing the narrow channel effect.
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Inventors:
Keisuke Hatano
Yasushi Nakashiba Taka
Yasushi Nakashiba Taka
Application Number:
JP32067297A
Publication Date:
January 21, 2002
Filing Date:
November 21, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/339; H01L27/148; H01L29/10; H01L29/762; H01L29/768; (IPC1-7): H01L29/762; H01L21/339; H01L27/148
Domestic Patent References:
| JP258271A | ||||
| JP62242363A | ||||
| JP5266688A | ||||
| JP2208946A | ||||
| JP5259431A | ||||
| JP774344A | ||||
| JP9199711A |
Attorney, Agent or Firm:
Takao Maruyama