PURPOSE: To enable to instantaneously clear the signal of a signal charge transfer part by a method wherein the part is provided with a common control gate region and a drain region discarding unnecessary charges.
CONSTITUTION: A charge transfer type one-dimensional solid-state image pickup device has photoelectric conversion parts 1, photo gate parts 2, shift gate parts, and a channel stopping region 5, and all the gate electrodes of the signal charge transfer parts 4 are connected to the drain region 9 via common control gate electrode 8. In case when the information of all picture elements after a certain picture element is unnecessary, when the impressed voltage R of the impressed electrode 8 of the control gate electrode 8 is set at a high level, all the charges accumulated in said transfer part are discarded to the drain region via control gate; then, the transfer part comes free of charges at all, and the next scanning is started. High speed scanning can be performed, and only effective information can be taken out by free control of the control gate voltage.
JPH0774346 | CCD IMAGE SENSOR WITH ACTIVE TRANSISTOR PIXEL |
JP2003224254 | SOLID-STATE IMAGE PICKUP ELEMENT AND ITS MANUFACTURING METHOD |
JPH04299862 | SOLID-STATE IMAGE SENSOR |
AOKI TADASHI
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