PURPOSE: To raise the sensitivity of a charge transfer device by applying a clock pulse through an electrode arranged on an element separating region to a P-N junction diode to transfer the charge.

CONSTITUTION: An N-type CCD channel is formed of an N-type region 4 formed on a P-type silicon substrate 2. Each cell has four regions I, II, III, IV, to which different impurities are respectively implanted. A P-type region 6 is uniformly formed on the region 4, and an n-type region 8 is formed on the region 6 in the region II and an element separating region 12. A diode formed of the regions 8, 6 is used as a gate electrode for applying a clock pulse for transferring the charge, and the region 8 is connected with the aluminum electrode 10 of the region 12. Thus, the incident light does not pass the gate electrode but is incident directly to the semiconductor, thereby improving a sensitivity.