To provide a charged particle beam exposing device preventing a zonal aperture from reaching a high temperature, and constituting the zonal aperture with a material facilitating machining.

A scattering aperture 4 with a sectional shape indicated in (b) is provided on a crossover surface A. An zonal holes 4B are provided on a substrate part 4A produced by fine-machining an Si wafer. The thickness of the scattering aperture 4 is designated to be several micrometers. When an incident charged particle beam 1 is incident on the scattering aperture 4, a part of the beam on the holes 4B passes through as a passed charged particle beam 2, and the other part of the beam on the substrate part 4A is scattered to become a scattered charged particle beam 2'. The passed charged particle beam 2 passes an aperture 5, and most of the scattered charged particle beam 2' is absorbed by the aperture and does not flow downward from the aperture.