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Title:
CHARGED PARTICLE BEAM EXPOSURE SYSTEM AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001052996
Kind Code:
A
Abstract:

To obtain a charged particle beam exposure system, which has high linewidth controllability on an exposure object due to improvements in the resolution of an illumination optical system.

Charged particles emitted from a charged particle beam source having a two-dimensional array shape illuminate a mask 3 by forming spots arranged in a two-dimensional array shape. Patterns of fluorescent material are formed on the mask 3, and fluorescent lights are emitted by the application of the charged particles. The emitted lights are focused by a transfer optical system to form image on a photoelectric surface 5 as in a conventional constitution. A minute photoelectron emitting two-dimensional array is formed on the photoelectric surface 5 at a position which is conjugate with the position of the two dimensional spot array on the mask 3 and photoelectrons 6 are emitted from the photoelectron emitting two-dimensional array, on which light is focused. The emitted electrons 6 form spots on an exposed object 7 by an optoelectronic system (not shown), such as a 1-1 image ficusing system using high magnetic field, etc., having desired resolution.


Inventors:
SHIMIZU HIROYASU
Application Number:
JP23030199A
Publication Date:
February 23, 2001
Filing Date:
August 17, 1999
Export Citation:
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Assignee:
NIKON CORP
International Classes:
H01J37/305; G03F1/20; G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F1/16; G03F7/20; H01J37/305
Attorney, Agent or Firm:
Toshiaki Hosoe