Title:
CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST MATERIAL
Document Type and Number:
Japanese Patent JP3198845
Kind Code:
B2
Abstract:
PURPOSE: To provide a chemical amplification type positive resist material having high sensitivity against high-energy beams such as far ultraviolet rays, electron beams, and X-rays, particularly KrF excimer laser, capable of forming a pattern when developed by an alkaline aqueous solution, excellent in sensitivity, resolution, and plasma etching resistance, and having a resist pattern excellent in heat resistance.
CONSTITUTION: The new sulfonium salt expressed by the formula is contained, where R1 indicates the hydrogen atom, alkyl group, or alkoxy group, Y indicates trifluoromethane sulfonate or p-toluene sulfonate, (n) is an integer of 0-2, (m) is an integer of 1-3, and n+m=3.
Inventors:
Youichi Ohsawa
Satoshi Watanabe
Katsuyuki Oikawa
Hironobu Tanaka
Yoshio Kawai
Jiro Nakamura
Satoshi Watanabe
Katsuyuki Oikawa
Hironobu Tanaka
Yoshio Kawai
Jiro Nakamura
Application Number:
JP32991494A
Publication Date:
August 13, 2001
Filing Date:
December 05, 1994
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
Nippon Telegraph and Telephone Corporation
Nippon Telegraph and Telephone Corporation
International Classes:
C07C381/12; G03F7/004; H01L21/027; (IPC1-7): G03F7/004; H01L21/027
Domestic Patent References:
| JP3189652A | ||||
| JP4258959A | ||||
| JP4248554A | ||||
| JP6194840A | ||||
| JP6242607A | ||||
| JP2181151A | ||||
| JP2181150A | ||||
| JP4219757A | ||||
| JP643653A | ||||
| JP5323590A | ||||
| JP6236033A | ||||
| JP6287174A | ||||
| JP8157451A |
Attorney, Agent or Firm:
Takashi Kojima