To provide a chemical amplification type resist pattern forming method by which the deterioration of the sensitivity and resolution of a chemical amplification type resist film formed on a substrate with age is suppressed and a resist pattern having a rectangular section shape and excellent in dimensional faithfulness is formed.

In the method for forming a chemical amplification type resist pattern by photolithography, a chemical amplification type resist film is formed on a substrate, a coating comprising amorphous polyolefins and having a smaller thickness than the resist film is formed on the resist film and the formation of a latent image pattern, the removal of the coating and development are successively carried out to form the objective chemical amplification type resist pattern.