Title:
CHEMICAL DRY ETCHING
Document Type and Number:
Japanese Patent JP3963295
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a dry etching method which can reduce the amount of PFC discharged in the etching and to have less effects on global warming phenomenon, by using an etching gas having a short atmosphere life and GWP.
SOLUTION: A mixture gas containing oxygen, octafluorocyclopentane (C5F8) and nitrogen as necessary is activated, and then a semiconductor substrate 9 and a film formed on the substrate are subjected to a dry etching process within an etching chamber 5 with use of the activated gas. A gas of C5F8 is used as an etching gas having short atmospherie life-time and GWP. Thereby the amount of PFC emitted during the etching operation can be reduced to have less effects on global warming phenomenon. The gas of C5F8 having short atmosphere life and GWP used as an alternate gas is expected as gas material for the purpose of reducing the amount of PFC gas.
Inventors:
Koichi Sato
Jinbo Sadayuki
Yukimasa Yoshida
Muto Makoto
Yasushi Tazawa
Jinbo Sadayuki
Yukimasa Yoshida
Muto Makoto
Yasushi Tazawa
Application Number:
JP15642299A
Publication Date:
August 22, 2007
Filing Date:
June 03, 1999
Export Citation:
Assignee:
Shibaura Mechatronics Co., Ltd.
Toshiba Corporation
Toshiba Corporation
International Classes:
H01L21/302; H01L21/3065; H01L21/768; (IPC1-7): H01L21/3065; H01L21/768
Domestic Patent References:
| JP2000311887A |
Attorney, Agent or Firm:
Toshi Takemura
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