Title:
CHEMICAL ETCHING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6140034
Kind Code:
A
Abstract:
PURPOSE:To realize 3 flattened surface by a method wherein an epitaxial lamination wherein a layer built of GaAs is positioned just under the topmost layer built of GaAlAs is exposed to an etchant composed of H2SO4+H2O2+H2O. CONSTITUTION:On a GaAs substrate 1, an N type clad layer 2, activation layer 3 and P type clad layer 4 are formed in that order, all the three made of AlGaAs respectively composed as prescribed. A P type GaAs cap 5 is provided to cover the top surface. A mask 6 is provided and the GaAs cap 5 only is subjected to etching. The mask 6 is provided again. Etching is effected by using an etchant composed of H2SO4+H2O2+H2O until the GaAs substrate 1 is affected for the formation of flat mirror-like walls vertical to the P-N junction. The etchant should be composed of 10-96wt% of H2SO4 and 5-50wt% of H2O2+ H2O. The ratio in volume of H2SO4 against H2O2+H2O should be 10<-2>-10. With the etching rate being well under control within this range, etching results in a mirror surface. Such a product is of great use because it needs no cleavage when it is incorporated into a semiconductor laser device.
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Inventors:
SHIBUYA TAKAO
HAMADA TAKESHI
WADA MASARU
SHIMIZU YUICHI
ITO KUNIO
TERAMOTO IWAO
HAMADA TAKESHI
WADA MASARU
SHIMIZU YUICHI
ITO KUNIO
TERAMOTO IWAO
Application Number:
JP16185584A
Publication Date:
February 26, 1986
Filing Date:
August 01, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/308; H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Akira Kobiji (2 outside)