Title:
CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
Japanese Patent JP2016100477
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method for polishing a silicon carbide substrate having a step terrace structure with an oxidizer, which enables the polishing in a short time.SOLUTION: A chemical mechanical polishing method comprises: a step for supplying a substrate W with slurry including at least an oxidizer; and a polishing step for polishing the substrate W in a state in which a direction D1 of mounting a step terrace structure of the substrate is made to be substantially coincide with a polishing direction D2 of the substrate. The silicon carbide substrate is polished smoothly by making the direction of mounting the step terrace structure of silicon carbide substantially coincide with the polishing direction and therefore, the silicon carbide substrate can be polished in a short time.SELECTED DRAWING: Figure 6
Inventors:
NAGAI DAICHI
Application Number:
JP2014236838A
Publication Date:
May 30, 2016
Filing Date:
November 21, 2014
Export Citation:
Assignee:
TOKYO SEIMITSU CO LTD
International Classes:
H01L21/304; B24B37/10
Attorney, Agent or Firm:
Takakichi Hayashi
Takamitsu Shimizu
Takamitsu Shimizu