Title:
CHEMICAL MECHANICAL EVENNESS
Document Type and Number:
Japanese Patent JPH07312366
Kind Code:
A
Abstract:
PURPOSE: To reduce a large dent in a conductive material part which is generated during Damascus polishing process, by forming a patterning layer of material like an oxide film, and vapor-depositing a blanket layer. CONSTITUTION: Dielectrics 10 exists on both sides of a trough 20 and formed in the dielectrics 10 which is so determined that a substrate 12 or a barrier layer exists in the bottom part. A conformable blanket layer composed of conductive material 22 such as doped polycrystalline silicon or metal, e.g. copper or tungsten, is vapor-deposited on the surface of a wafer. A thin layer of TEOS 60 is formed on the tungsten blanket layer 22. The most protruding region 62 of the TEOS layer 60 is eliminated by a CMP process using slurry containing silicon oxide abrasive agent. Finally the tungsten layer 22 and the left TEOS 60 are etched by a CMP process which is optimized for polishing tungsten. Thereby conductive material 30 is left in the flat dielectrics 10 surface.
Inventors:
TORANGU TORI DOON
KURISU CHIYAN YUU
KURISU CHIYAN YUU
Application Number:
JP10590393A
Publication Date:
November 28, 1995
Filing Date:
April 09, 1993
Export Citation:
Assignee:
MICRON TECHNOLOGY INC
International Classes:
H01L21/28; C23F1/00; C23F3/00; H01L21/304; H01L21/3205; H01L21/321; H01L21/768; (IPC1-7): H01L21/3205; H01L21/28; H01L21/304
Domestic Patent References:
| JPS62114242A | 1987-05-26 | |||
| JPS5230159A | 1977-03-07 |
Attorney, Agent or Firm:
Hiroaki Tazawa (1 person outside)