To provide a chemical mechanical polishing method for polishing a workpiece having a barrier metal film and a conductor film, which has improved efficiency of polishing processing by continuously polishing the conductor film and the barrier metal film using the same polishing table, in a step of manufacturing a semiconductor device.
The chemical mechanical polishing method is used to polish the workpiece having the barrier metal film and the conductor film provided on the barrier metal film. In this method, a first polishing process in which a polishing solution A is used to polish the conductor film, and a second polishing process in which a polishing solution B is used to polish the barrier metal film are continuously executed on the same polishing table having a polishing pad arranged thereon, and the polishing solutions A and B each contain (1) particles obtained by a dynamic optical dispersion method and having an average within a range of 60-150 nm, (2) particles obtained by a dynamic optical dispersion method and having an average within a range of 10-50 nm and (3) an oxidizing agent.
COPYRIGHT: (C)2007,JPO&INPIT
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda