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Title:
CHEMICAL NICKEL PLATING METHOD FOR THERMOELECTRIC SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2002043639
Kind Code:
A
Abstract:

To provide a chemical nickel plating method for a thermoelectric element module including P type elements and N type elements mixedly in which P type elements and N type elements are plated simultaneously through one processing.

A thermoelectric element is subjected to alkaline defatting and cleaned with hydrofluoric acid. Subsequently, N type elements are subjected to surface conditioning using CPL based polishing liquid in a first stage etching followed by second stage etching using an etching liquid of nitric acid/acid ammonium fluoride/hydrogen peroxide added with a trace of propylalchol and lauryl sodium sulfate as a countermeasure against gas generation. The N type elements are subjected to removal of oxide film and chemical polishing in the second half of etching process. The P type elements are subjected to dissolution of formed oxide film and chemical polishing. Subsequently, black oxide film formed immediately after etching is cleaned ultrasonically in alkaline solution and removed in desmut process. Finally, chemical nickel plating is performed following to sensitizing/activating process.


Inventors:
YAJIMA YOICHI
YAMAMOTO JUNICHI
FURUHATA HAJIME
ARAI RYOJI
MINAMI MASAYOSHI
TSUBOI HIRAKI
NAKAMURA YUMIO
YOKOCHI HARUYUKI
SAKAI TOSHIHISA
NISHINOIRI TAKASHI
NAKAMURA HIROKO
Application Number:
JP2000254666A
Publication Date:
February 08, 2002
Filing Date:
July 22, 2000
Export Citation:
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Assignee:
SHINKO KOGYO KK
NAGANO PREFECTURE
ORION MACHINERY CO LTD
CERATEC JAPAN CO LTD
International Classes:
C23C18/18; C23C18/31; C23F1/30; H01L35/16; H01L35/34; (IPC1-7): H01L35/34; C23C18/18; C23C18/31; C23F1/30; H01L35/16