Title:
ジオール構造を末端に有する重合生成物を含む薬液耐性保護膜形成組成物
Document Type and Number:
Japanese Patent JP7447892
Kind Code:
B2
Abstract:
A protective film forming composition which has good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of a semiconductor substrate and also has good coverage even in a stepped substrate, and from which a flat film can be formed due to a small difference in film thickness after being embedded; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. This protective film forming composition against a wet etching liquid for semiconductors contains an organic solvent and a polymer having, at a terminal thereof, a structure containing at least one pair of two adjacent hydroxyl groups in a molecule. The structure containing two adjacent hydroxyl groups in a molecule may be 1,2-ethanediol structure (A).
Inventors:
Takafumi Endo
Tokio Nishida
Tokio Nishida
Application Number:
JP2021504096A
Publication Date:
March 12, 2024
Filing Date:
March 03, 2020
Export Citation:
Assignee:
Nissan Chemical Co., Ltd.
International Classes:
G03F7/11; G03F7/40
Foreign References:
| WO2007148627A1 | ||||
| WO2009104685A1 | ||||
| WO2018203540A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Tsukuni