PURPOSE: To efficiently form the film of a compd. on a substrate by separately connecting a source gas supply pipe and a gaseous reactant supply pipe to a reaction chamber, connecting the gaseous reactant supply pipe to a reaction space and mixing both gases in the reaction space to cause a reaction.
CONSTITUTION: A gas supply system 2, a reaction system 3 and an evacuating system 4 are successively connected to constitute the chemical vapor deposition device 1. The gas supply system 2 is formed with the carrier gas supply pipe 11, plural carrier gas branch pipes 12 connected to the pipe 11, a bubbler 14, a branch gas supply pipe 16 connected to the bubbler 14 through a stop valve 15, a source gas supply pipe 17 and a gaseous reactant supply pipe 22. The supply pipes 11 and 16 are connected to the source gas supply pipe 17 which is connected to a reaction chamber 31. The gaseous reactant supply pipe 22 is connected to the reaction space 32 of the reaction chamber 31.
TSURUOKA TAIJI
ABE HITOSHI
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