Chemical-vapor-deposition materials consisting of a ruthenium complex, a manufacturing method for the same, and a chemical vapor deposition method

Title:

Chemical-vapor-deposition materials consisting of a ruthenium complex, a manufacturing method for the same, and a chemical vapor deposition method

Document Type and Number:

Japanese Patent JP5992764

Kind Code:

B2

Abstract:

The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a raw material for chemical deposition having a preferable decomposition temperature, and the production cost therefor is low: [Chemical Formula 1](nR - L)Ru(CO) 3 wherein L is a polyene having a carbon number of from 4 to 8 and 2 to 4 double bonds, wherein the polyene L has n (n ¥ 1) pieces of substituents Rs, wherein the substituents Rs are each a fluoroalkyl group having a carbon number of from 1 to 6 and a fluorine number of from 1 to 13, and in the case when the polyene L has two or more (n ¥ 2) of the substituents Rs, the carbon numbers and the fluorine numbers of the substituents Rs may be different in the same molecule.

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Inventors:

Ryosuke Harada
Naoki Nakata
Masayuki Saito

Application Number:

JP2012181329A

Publication Date:

September 14, 2016

Filing Date:

August 20, 2012

Export Citation:

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Assignee:

Tanaka Kikinzoku Kogyo Co., Ltd.

International Classes:

C23C16/16; C07C17/00; C07C21/19; C07C23/10; C07C23/16

Domestic Patent References:

JP2010504424A
JP2002523634A

Foreign References:

WO2004050947A1

Other References:

Yi-Hwa SONG, et al.,Deposition of conductive Ru and RuO2 thin films employing a pyrazolate complex [Ru(CO)3(3,5-(CF3)2-pz)]2 as the CVD source reagent,Chemical Vapor Deposition,2003年,Vol.9, No.3,P.162-169
Yoshihide SENZAKI, et al.,Chemical vapor deposition of ruthenium and osmium thin films using (hexafluoro-2-butyne) tetracarbonylruthenium and -osmium,Chemistry of Materials,1993年,Vol.5, No.12,P.1715-1721

Attorney, Agent or Firm:

Patent business corporation Tanaka, Okazaki and Associates

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