CHEMICAL VAPOR DEPOSITION PROCESS FOR FABRICATING POROUS ORGANIC SILICA FILM

Title:

CHEMICAL VAPOR DEPOSITION PROCESS FOR FABRICATING POROUS ORGANIC SILICA FILM

Document Type and Number:

Japanese Patent JP2004320005

Kind Code:

A

Abstract:

To provide organic silica glass and an organic polymer film useful for an electronic device and a process for fabricating the same.

The subject process is adapted for enhancing the chemical vapor deposition of a film containing organic species, comprising steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous chemical reagent containing organic precursor having chemical bondings of carbon and hydrogen and rate-enhancing agent, said rate-enhancing agent being at least one selected from the group consisting of oxygen-containing compound, peroxide expressed in a chemical symbol R1OOR2, peroxide expressed in a chemical symbol R3 C(O)OC(O)R4, fluorine-containing compound, and weighty inert gas; inducing the reaction of the reagent; and applying the energy, which is sufficient for depositing a film on at least a part of the substrate, to the chemical reagent within the reaction chamber.

Inventors:

VRTIS RAYMOND NICHOLAS
LUKAS AARON SCOTT
O'NEILL MARK LEONARD
VINCENT JEAN LOUISE
BITNER MARK DANIEL
KARWACKI EUGENE JOSEPH JR
PETERSON BRIAN KEITH

Application Number:

JP2004105545A

Publication Date:

November 11, 2004

Filing Date:

March 31, 2004

Export Citation:

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Assignee:

AIR PROD & CHEM

International Classes:

C23C16/30; C23C16/56; H01B3/46; H01L21/768; H01L21/312; H01L21/316; H01L23/522; (IPC1-7): H01L21/312; H01L21/768

Attorney, Agent or Firm:

Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama

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