Title:
CHEMICAL VAPOR GROWTH DEVICE
Document Type and Number:
Japanese Patent JPH11236673
Kind Code:
A
Abstract:
To enable the precise flow rate control of a vaporized gas and to improve the reliability in film formation in a chemical growth device in which a vaporized gas produced by vaporizing a liq. material by bubbling is diluted by the introduction of a carrier gas and is fed to a reaction chamber to form a film.
A liq. raw material 20, a piping system 38a introducing a carrier gas 27 and a piping system 37 feeding a gaseous starting material to a reaction chamber are provided with heaters 34, and each heater 34 provided on the piping systems 37 and 38a has a mechanism of directly monitoring the gas temp. in the piping to control it to the prescribed one, prevents the liquefaction of the vaporized gas and feeds a stable flow rate.
Inventors:
IRIZUMI TOMOYUKI
Application Number:
JP3843298A
Publication Date:
August 31, 1999
Filing Date:
February 20, 1998
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C23C16/44; C23C16/448; C23C16/455; H01L21/205; H01L21/31; (IPC1-7): C23C16/44; H01L21/205; H01L21/31
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)
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