Title:
化学気相成長材料及び化学気相成長方法
Document Type and Number:
Japanese Patent JP4639686
Kind Code:
B2
Abstract:
A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
Inventors:
Tatsuya Sakai
Sachiko Hashimoto
Yoji Matsuki
Sachiko Hashimoto
Yoji Matsuki
Application Number:
JP2004218311A
Publication Date:
February 23, 2011
Filing Date:
July 27, 2004
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
C23C16/18; H01L21/28; H01L21/285; C07C257/14; C07F15/00
Domestic Patent References:
| JP2002523634A |
Foreign References:
| WO2004046417A1 |