To provide a negative resist composition for forming a resist film, in which fine distribution and diffusion of a compound having an ability of generating an acid in the resist film can be further homogenized, effective sensitivity can be advantageously obtained, LER (line edge roughness) can be improved, deactivation of an acid on a substrate interface can be suppressed and a resist profile with little undercut degree specific to a negative resist composition can be formed.
A chemically amplified negative resist composition is provided, having such a mechanism that crosslinks are formed among resist polymers by a crosslinking agent and/or a repeating unit having a crosslinking functional group while an acid generating by irradiation with high energy beams acts as a catalyst and that the composition is changed into insoluble with an alkaline developing solution. The resist polymer contains repeating units comprising: (1) a (meth)acrylic acid ester having an acid generating group in a side chain; (2) a (meth)acrylic acid ester unit having a condensed aromatic ring in a side chain; (3) an acenaphthylene unit; and (4) an indene unit.
DOMON HIROMASA
WATANABE SATOSHI
| JP2009242789A | 2009-10-22 | |||
| JP2008248063A | 2008-10-16 | |||
| JP2008052254A | 2008-03-06 | |||
| JP2008249951A | 2008-10-16 | |||
| JP2006201532A | 2006-08-03 | |||
| JP2009242789A | 2009-10-22 | |||
| JP2008248063A | 2008-10-16 | |||
| JP2008052254A | 2008-03-06 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
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