To provide a resist composition from which a pattern having excellent resolution, line edge roughness and pattern collapse resistance can be obtained.
A chemically amplified photoresist composition, comprises: an acid generator (A) represented by formula (I), and a resin (B) which has a structural unit (b1) derived from a monomer that becomes soluble in an alkali by an action of an acid, a structural unit (b2) derived from a monomer that has an adamantyl group substituted with at least two hydroxyl groups, and a structural unit (b3) derived from a monomer that has a lactone ring. In formula (I), Q1 and Q2 each represent F or a C1-C6 perfluoroalkyl group; X1 represents a single bond or -[CH2]k-; k represents an integer of 1 to 17; Y1 represents an optionally substituted C3-C36 saturated cyclic hydrocarbon group; and Z+ represents an organic cation.
SUGIHARA MASAKO
FUJI YUSUKE
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