CHEMICALS TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

CHEMICALS TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP3946974

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To improve the in-plane uniformity of the working dimensions of a film to be worked at the time of feeding chemicals for working the film to be worked on a substrate to be treated on which the film to be worked is formed.
SOLUTION: This method comprises a step S102 for feeding chemicals for working a film to be worked on a substrate to be treated on which a film to be worked is formed, and for forming a chemical film on the substrate to be treated, a step S103 for making thin the chemical film, and a step S104 for forming an air flow to be brought into contact with the surface of the thin chemical film, and for forming the flow of chemicals in the chemical film while holding the chemical film on the substrate to be treated.

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Inventors:

Kei Hayasaki
Hideaki Sakurai
Shinichi Ito

Application Number:

JP2001290111A

Publication Date:

July 18, 2007

Filing Date:

September 21, 2001

Export Citation:

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Assignee:

Toshiba Corporation

International Classes:

G03F7/30; H01L21/027; B05D1/40; B05D3/04; H01L21/306; (IPC1-7): H01L21/027; B05D1/40; B05D3/04; G03F7/30; H01L21/306

Domestic Patent References:

JP2001228625A
JP10232498A
JP8330210A
JP11307433A
JP61082432A
JP2001044100A
JP11150064A
JP2000208413A

Attorney, Agent or Firm:

Takehiko Suzue
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai

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