To provide a voltage-driven semiconductor device driving circuit and a voltage-driven semiconductor device driving method, which are capable of surely reversely biasing a gate in a partial period of an off period of a voltage-driven semiconductor device regardless of an input pulse width.

A voltage-driven semiconductor device driving circuit 301 is configured such that a bipolar transistor 1, a bipolar transistor 2, a bipolar transistor 3, a capacitor 4, a Zener diode 5, a diode 6, and a resistance 7 are connected, as shown in Fig.3, to store energy in the capacitor 4 even in a period when a voltage-driven semiconductor device 9 is in the off-state.

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