To provide cleaning equipment and a cleaning method ensuring a uniform cleaning effect over the entire surface of a wafer without lowering throughput.

The wafer W as an article being cleaned is supported by means of a spin chuck 12 and rotary-driven at a constant speed in a horizontal plane. The mixture of liquid and gas is ejected toward the wafer W from a cleaning medium supply nozzle 13 scanning the wafer W from the central part thereof along the outer circumferential edge. Gas supply is increased as the nozzle 13 moves from the central part toward the outer circumferential edge of the wafer W, thus increasing the energy of the cleaning medium ejected toward the wafer W as a line speed increases.