Title:
CLEANING METHOD FOR INP WAFER
Document Type and Number:
Japanese Patent JPS62252140
Kind Code:
A
Abstract:
PURPOSE: To improve the qualities of a semiconductor device and an optical element having epitaxially grown layers by organically cleaning an InP wafer after mirror-polishing and then cleaning it with specific cleanser.
CONSTITUTION: A mirror-polished InP wafer is organically cleaned to remove bonding wax. Then, a mixture solution of 10W30 of phosphoric acid, lW5 of hydrogen peroxide and 1 or water or 1W10 of hydrogen fluoride, 1W5 of hydrogen peroxide and 1 of wafer is used as a cleanser to clean it. Thus, oxides of In, P adhered to the surface are removed for etching or other device forming process as pretreatment for the following epitaxial growth.
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Inventors:
ODA OSAMU
TAKAHASHI YUICHI
FUKUI TORU
TAKAHASHI YUICHI
FUKUI TORU
Application Number:
JP9465886A
Publication Date:
November 02, 1987
Filing Date:
April 25, 1986
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
H01L21/308; B08B3/08; H01L21/304; H01L21/306; (IPC1-7): B08B3/08; H01L21/304; H01L21/306
Domestic Patent References:
| JPS59152632A | 1984-08-31 | |||
| JPS55138236A | 1980-10-28 | |||
| JPS53101975A | 1978-09-05 | |||
| JPS5413500A | 1979-01-31 | |||
| JPS5591832A | 1980-07-11 |
Attorney, Agent or Firm:
Motohiro Kurauchi
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