PURPOSE: To remove a high-melting point metal deposited on a quartz susceptor by making the preset temperature of a heating source such as lamp for heating the quartz susceptor lower than a conventional preset temperature in a method for removing the high-melting point metal deposited on the quartz susceptor mounting a silicon wafer when the high-melting point metal is vapor phase- grown on the silicon wafer.

CONSTITUTION: In the cleaning method of a semiconductor production unit for removing a high-melting point metal deposited on a quartz susceptor 4 mounting a wafer 6 by heating the quartz susceptor 4 and by bringing nitrogen trifluoride into contact with the susceptor to remove the metal, a wafer 6 or metal sheet difficult to thermally of a size covering a region, in which the high-melting point metal is deposited is mounted on the quartz susceptor 4, which is heated subsequently.