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Title:
CLEANING METHOD OF VAPOR-PHASE APPARATUS
Document Type and Number:
Japanese Patent JPS59142839
Kind Code:
A
Abstract:

PURPOSE: To clean easily attached matters deposited on the inner wall of a reaction chamber or the like when an amorphous silicon film is formed on a substrate by a vapor-phase method, by using a gaseous mixture of carbon tetrafluoride and oxygen as an etchant.

CONSTITUTION: A substrate is brought out by substrate take-out means without breaking a vacuum state in an apparatus, and instead of it a new anode 1 for a dummy is brought in by substrate take-in means. Next a gaseous mixture of carbon tetrafluoride and oxygen in a gaseous mixture tank 8 is introduced to a reaction chamber through a ring 9 for releasing an etching gas and a plasma is generated by a high-frequency power source 5. By fluorine-radical particles formed by the plasma reaction of the gaseous mixture, polysilane deposited to the inner wall of the reaction chamber or the like is etched to form a vapor of silicon tetrafluoride or the like. The cleaning of the inner wall of the reaction chamber is carried out by releasing the vapor out of the vacuum chamber through an exhausting system 10.


Inventors:
Fujiyama, Yasutomo
Kamiya, Osamu
Application Number:
JP1983000013744
Publication Date:
August 16, 1984
Filing Date:
February 01, 1983
Export Citation:
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Assignee:
CANON INC
International Classes:
H01J37/32; B01J19/08; C01B33/02; C23C16/44; C23F4/00; (IPC1-7): B01J19/08; C01B33/02



 
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