To restrain an active state of a substrate surface by eliminating organic material by jetting ozone water on a substrate, forming an oxide film, and cleaning the substrate with a brush.

A horizontal arm is so turned that a cleaning brush 31a is positioned outside a spin cup. A semiconductor wafer 22 is rotated together with a rotating chuck. An ozone water L1 is supplied to the upper surface of the wafer 22 from a second nozzle member 56, organic material U is decomposed and eliminated from the upper surface of the semiconductor wafer 22, and an oxide film S is formed. Continuously, cleaning fluid L2 such as pure water is supplied to the upper surface of the semiconductor wafer 22 from a first nozzle member 35, and the cleaning brush 31a is brought into contact with the upper surface of the semiconductor wafer 22 with a specified pressure. The cleaning brush 31a is revolved from the center of the radial direction of the semiconductor wafer 22 to the outside, and particles P are removed from the oxide film S of the semiconductor wafer 22.