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Patent Searching and Data


Title:
CMOS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05275627
Kind Code:
A
Abstract:

PURPOSE: To avoid the latch-up of a CMOS.IC by a method wherein the p type layer of an n-MOS transistor is encircled by the n type layer separated from the n well of a p-MOS transistor.

CONSTITUTION: A CMOS inverter circuit is formed in an n type layer 4 separated from the n well of an n-MOS transistor 2. A parasitic pnp transistor 5 comprising positive feedback in a reference CMOS inverter is connected to a parasitic npn transistor 6 through the intermediary of the parasitic npn transistor 7 and the parasitic pnp transistor 8 between p-MOS and n-MOS. At this time, the npn transistor 7 and the pnp transistor 8 whose all terminals are impressed with the inverse bias are prevented from being actuated. Through these procedures, the actuations of positive feedback circuit can be suppressed thereby enabling the latch-up of CMOS.IC to be avoided.


Inventors:
Tatsunori Kanaya
Yumoto attack
Moriguchi Akisada
Koji Kabayama
Kazuyuki Tajiri
Application Number:
JP7367692A
Publication Date:
October 22, 1993
Filing Date:
March 30, 1992
Export Citation:
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Assignee:
株式会社日立製作所
International Classes:
H01L27/06; H01L21/8249; (IPC1-7): H01L27/06
Attorney, Agent or Firm:
Ogawa Katsuo