CMP EQUIPMENT, POLISHING METHOD USING THE SAME, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

CMP EQUIPMENT, POLISHING METHOD USING THE SAME, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH11145091

Kind Code:

A

Abstract:

To provide a CMP equipment capable of CMP treatment of high performance and high reliability, a polishing method using the CMP equipment, and a manufacturing method of a semiconductor integrated circuit device.

In a CMP equipment, a waste liquid discharge vent 9 for detection is arranged in the middle part of a waste liquid discharge pipe 8 linked with a CMP process chamber 5 and a waste liquid treating function part 7, and a waste liquid detecting sensor 10 is attached to the waste liquid discharge vent 9 for detection. In a polishing method using the CMP equipment, an insulating film or a metal layer in a wafer 1 is polished, and the work finishing of CMP treatment of the insulating film or the metal layer is judged by using the waste liquid detecting sensor 10.

Inventors:

MORIYAMA ICHIRO
ITO HIDEFUMI

Application Number:

JP30297497A

Publication Date:

May 28, 1999

Filing Date:

November 05, 1997

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

B24B37/00; B24B37/013; H01L21/304; (IPC1-7): H01L21/304; B24B37/04

Attorney, Agent or Firm:

Yamato Tsutsui

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