CMP NONSELECTIVE SLURRY, ITS MANUFACTURING METHOD AND METHOD OF FORMING PLUG IN INSULATING LAYER ON WAFER USING TE SAME

Japanese Patent JP3805192

B2

PROBLEM TO BE SOLVED: To provide a nonselective slurry capable of removing a metal layer, a barrier layer, and an insulating layer at the same time and nearly at the same polishing rate through a single CMP process, and a method of manufactur ing the same, and a method of forming a plug through the use of the same.
SOLUTION: A slurry is used for chemically and mechanically polishing a metal layer, a barrier layer, and an insualting layer used in a semiconductor integrated circuit. The slurry comprises a first oxidizer which oxidizes a second oxidizer, the second oxidizer which oxidizes the metal layer and recovers its oxidizing power by the first oxidizer, an additive agent which enables the barrier layer to be polished at a higher speed, and a non selective slurry which contains abrasive material in an aqueous solvent and is capable of removing the metal layer, the barrier layer, and the insulating layer substantially at the same removing rate by polishing. A method of manufacturing the slurry and a method of forming a plug by the use of the nonselective slurry are provided.

Lee Zhongyuan
River record

JP2000353056A

August 02, 2006

November 20, 2000

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Samsung Electronics Co.,Ltd.

H01L21/304; B24B37/00; C09G1/02; C09K3/14; H01L21/306; H01L21/3105; H01L21/321; H01L21/768; (IPC1-7): H01L21/304; B24B37/00; C09K3/14; H01L21/306

JP11116948A
JP10067986A
JP9167797A
JP10275789A

Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani

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