To polish a surface without flaws at a high speed for making high planarity by comprising a low-molecular additive selected from among cerium oxide particle, dispersant, and cationic water-soluble organic low-molecule, in short a specified amine or ammonium, as well as water.
A low-molecular additive, as well as water, selected from among cerium oxide particles, dispersant, and cationic water-soluble organic low- molecule which is a first class amine, second class amine, third class amine or fourth class ammonium, are included in this polishing agent. So, under a high polishing load, a cerium oxide particle breaks through the coat of additive formed on a surface to be polished to increase a polishing speed. If roughness exists on the surface to be polished, since effective polishing load at a protruding part is larger than a recessed part, the protruding part is selectively polished to accomplish making global planarity with less dependency on a pattern.
MACHII YOICHI
YOSHIDA MASATO
ASHIZAWA TORANOSUKE
Next Patent: CMP-POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE