Title:
CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN-PATTERNED WAFER, AND METHOD FOR POLISHING TUNGSTEN PATTERNED WAFER BY USE THEREOF
Document Type and Number:
Japanese Patent JP2022022185
Kind Code:
A
Abstract:
To provide a CMP slurry composition for polishing a tungsten patterned wafer, which is improved in the composition stability against microorganism including mold and/or bacteria.SOLUTION: Provided are a CMP slurry composition for polishing a tungsten patterned wafer and a method for polishing a tungsten patterned wafer by use thereof. The CMP slurry composition comprises: one or more kinds of solvent selected from a group consisting of a polar solvent and a nonpolar solvent; a polishing agent; and a biocide. The polishing agent contains silica quality modified by one or more kinds selected from a group consisting of a silane with two nitrogen atoms and a silane with three nitrogen atoms. The biocide contains a compound given by the chemical formula 3.SELECTED DRAWING: None
Inventors:
LEE EUI RANG
KOO YOON YOUNG
KIM WON JUNG
KIM HYEONG MOOK
PARK TAE WON
LEE JONG-WON
CHO YOUN JIN
KOO YOON YOUNG
KIM WON JUNG
KIM HYEONG MOOK
PARK TAE WON
LEE JONG-WON
CHO YOUN JIN
Application Number:
JP2021120730A
Publication Date:
February 03, 2022
Filing Date:
July 21, 2021
Export Citation:
Assignee:
SAMSUNG SDI CO LTD
International Classes:
H01L21/304; B24B37/00; C01B33/18; C09G1/02; C09K3/14
Attorney, Agent or Firm:
Murayama Yasuhiko
Tatsuhiko Abe
Tatsuhiko Abe
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