Title:
CMP SLURRY, POLISHING METHOD, AND CMP TOOL
Document Type and Number:
Japanese Patent JP3353831
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To speedily eliminate copper and to minimize the loss of copper in a patterned interconnected body without eliminating a metal layer and a dielectric layer at a lower side or corroding copper.
SOLUTION: The chemical - mechanical polishing(CMP) slurry for polishing the layer of copper or that of the alloy of copper contains an etchant, an oxidation suppression agent, and an additive for adjusting the complexing between the copper and the oxidation suppression agent.
Inventors:
Blaster Brasic
Daniel Sea Edelstein
Paul M Pheniy
William Guthrie
Mark Jaso
Frank Be Kaufman
Naphthali rustig
Peter Lauper
Kenneth rodbell
David Be Thompson
Daniel Sea Edelstein
Paul M Pheniy
William Guthrie
Mark Jaso
Frank Be Kaufman
Naphthali rustig
Peter Lauper
Kenneth rodbell
David Be Thompson
Application Number:
JP30089099A
Publication Date:
December 03, 2002
Filing Date:
October 22, 1999
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/304; C09K3/14; C09K13/00; C09K13/02; C09K13/04; C09K13/06; (IPC1-7): H01L21/304; C09K3/14; C09K13/00; C09K13/02; C09K13/04; C09K13/06
Domestic Patent References:
| JP11274114A | ||||
| JP10279926A | ||||
| JP883780A | ||||
| JP11195628A | ||||
| JP11135466A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)