PURPOSE: To contrive improvement in the uniformity of thickness of the film formed on the material to be coated by a method wherein a rotary stand is supported by a rotary inversion mechanism which can be rotated on the plane surface intersecting with the rotating surface, and to enable the material to be treated to make an inversion on the rotary stand.

CONSTITUTION: An inversion mechanism 7 is operated, it is inverted in such a manner that the coated surface of a photoresist 5 is facing downward while the wafer 3 retained by a spin chuck 2 is being rotated, and the above-mentioned state is maintained for the prescribed period. At this time, as the coated surface of the wafer 3 is facing downward, the excessive photoresist 5 remaining in the gap of pattern protrudingly formed on the coated plane surface of the wafer due to the surface tension and the like, for example, is removed from the gap of pattern by means of resultant force of the weight of the inversion mechanism 7 itself and the centrifugal force generated by the rotation of the wafer 3. As a result, a uniform film of photoresist 5 can be formed on the surface of the wafer 3 along the cross-sectional shape of the roughened part formed by patterning.