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Title:
COATING METHOD FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6392046
Kind Code:
A
Abstract:

PURPOSE: To make it possible to perform protective sealing of an element at a low temperature of 200°C and to enhance the reliability of the element, by coating the semiconductor element with a imide based organic material in which alkali content is 0.1 ppm or less, and heating and solidifying the material at a temperature lower than a softening point in a neutral or oxidizing atmosphere.

CONSTITUTION: An element is coated with an imide based sealing material, in which the quantity of alkali is 0.1 ppm or less. Thereafter, heat treatment is performed in a neutral or oxidizing atmosphere for 30 minutes at 200°C, and the material is solidified. When silica phosphate glass (1μm) is attached on the semiconductor element coating is applied, an element which has excellent reliability for a long period at a temperature of 90°C and at a humidity of 80%, is obtained. Thus adverse effects on interconnection bonding and a diffused layer when sealing is performed at a high temperature can be prevented.


Inventors:
Kobayashi, Keiji
Application Number:
JP1986000237058
Publication Date:
April 22, 1988
Filing Date:
October 07, 1986
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L21/312; H01L23/29; H01L23/31; (IPC1-7): H01L21/312; H01L23/30